Effects of curing temperature on the optical and charge trap properties of InP quantum dot thin films

Bulletin of the Korean Chemical Society

Volumn 32, Issue 1, 2011, Pages 263-272

  Mohapatra, Priyaranjan ^a   Dung, Mai Xuan ^a   Choi, Jin Kyu ^a   Jeong, Sohee ^b   Jeong, Hyun Dam ^a  

^a Chonnam National University   (South Korea)

^b Korea Institute of Machine and Materials   (South Korea)

Author keywords

Charge trap; InP; Quantum dot; Thin films

Indexed keywords

BLUE SHIFT; CAPACITANCE VOLTAGE MEASUREMENTS; CHARGE TRAP; COLLOIDAL SOLUTIONS; COORDINATING SOLVENTS; CORE DIAMETERS; CURING TEMPERATURE; DE-TRAPPING; DEEP ENERGY LEVELS; DEGASSING PROCESS; DIFFERENT SIZES; EDX ANALYSIS; EMISSION BEHAVIOR; FLATBAND SHIFT; HIGH QUALITY; INP; INP QUANTUM DOTS; LUMINESCENCE INTENSITY; METAL-INSULATOR-SEMICONDUCTOR DEVICES; MOLAR CONCENTRATION; MONODISPERSE; POSITIVE CHARGES; QUANTUM DOT; QUANTUM DOT THIN FILMS; TEM IMAGES; XPS;

CHARGE TRAPPING; CURING; DANGLING BONDS; DIELECTRIC PROPERTIES; FATTY ACIDS; FILM THICKNESS; INDIUM; LIGANDS; LUMINESCENCE; METAL INSULATOR BOUNDARIES; MIS DEVICES; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; ORGANOMETALLICS; OXIDATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SILICON WAFERS; THIN FILMS;

FILM PREPARATION;

EID: 78951473659     PISSN: 02532964     EISSN: 12295949     Source Type: Journal    
DOI: 10.5012/bkcs.2011.32.1.263     Document Type: Article

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