SCOPUS 정보 검색 플랫폼

Solid-State Electronics

Volumn 56, Issue 1, 2011, Pages 100-103

Studies on vacuum deposited p-ZnTe/n-CdTe heterojunction diodes

(3) Rao, Gowrish K a Bangera, Kasturi V b Shivakumar, G K b

a MANIPAL INSTITUTE OF TECHNOLOGY (India)

b NATIONAL INSTITUTE OF TECHNOLOGY KARNATAKA (India)

Author keywords

Band diagram; C V characterization; I V characterization; p ZnTe n CdTe heterojunction; Vacuum deposition

Indexed keywords

ANDERSONS; BAND DIAGRAMS; BARRIER HEIGHTS; C-V CHARACTERISTIC; C-V CHARACTERIZATION; CDTE; CONDUCTION MECHANISM; DEPLETION REGION; ELECTRICAL CHARACTERIZATION; HETEROJUNCTION DIODES; IV CHARACTERISTICS; IV CHARACTERIZATION; VACUUM DEPOSITION METHOD;

CADMIUM ALLOYS; CADMIUM COMPOUNDS; CARRIER CONCENTRATION; SEMICONDUCTOR DIODES; VACUUM; VACUUM DEPOSITION;

HETEROJUNCTIONS;

EID: 78751648820 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/j.sse.2010.12.004 Document Type: Article

Times cited : (17)

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