Preparation and characterization of CuIn1 - xGaxSe2 - ySy thin film solar cells by rapid thermal processing

Thin Solid Films

Volumn 517, Issue 7, 2009, Pages 2121-2124

  Kulkarni, Sachin S ^a   Koishiyev, Galymzhan T ^b   Moutinho, Helio ^c   Dhere, Neelkanth G ^a  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b Department of Ecosystem Science and Sustainability   (United States)

^c NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

CuIn1 xGaxSe2 ySy; Materials and electrical characterization; RTP

Indexed keywords

APPROXIMATION THEORY; FILM PREPARATION; FILMS; GALLIUM; INTERNET PROTOCOLS; OPEN CIRCUIT VOLTAGE; PHOTOVOLTAIC CELLS; RAPID THERMAL PROCESSING; SEMICONDUCTING SELENIUM COMPOUNDS; SOLAR CELLS; SOLAR EQUIPMENT; THIN FILM DEVICES;

BAND-GAP VALUES; CAPACITANCE VOLTAGES; CARRIER DENSITIES; CUIN1 - XGAXSE2 - YSY; FILL FACTORS; LINEAR EXTRAPOLATIONS; MATERIALS AND ELECTRICAL CHARACTERIZATION; MATERIALS CHARACTERIZATIONS; OPEN CIRCUITS; RTP; SEM; SHORT CIRCUITS; SYNTHESIS AND CHARACTERIZATIONS; TEMPERATURE DECREASE; THERMAL PROCESSING; THIN-FILM SOLAR CELLS; XRD;

RAPID THERMAL ANNEALING;

EID: 58949100295     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.10.128     Document Type: Article

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