The effect of SiC substrate microstructure and impurities on the phase formation in carbide-derived carbon

Carbon

Volumn 49, Issue 4, 2011, Pages 1189-1198

  Ischenko, Vladislav ^a   Jang, Yeon Suk ^b   Kormann, Martina ^b   Greil, Peter ^b   Popovska, Nadejda ^b   Zollfrank, Cordt ^b   Woltersdorf, Jörg ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BORON-DOPED; CARBIDE DERIVED CARBON; CARBON LAYERS; CARBON RICH; DIAMOND PARTICLES; DIAMOND PHASIS; EFFECT OF HYDROGEN; HIGH PURITY; HIGH TEMPERATURE; NANO DIAMOND; NUCLEATION AND GROWTH; NUCLEATION OF DIAMONDS; PHASE FORMATIONS; POLYCARBOSILANES; POLYCRYSTALLINE SIC; QUANTUM CHEMICAL CALCULATIONS; SIC SUBSTRATES; SINTERED SIC; TURBOSTRATIC;

AMORPHOUS CARBON; BORON; CHLORINATION; CHLORINE; CRYSTAL IMPURITIES; DIAMONDS; DOPING (ADDITIVES); ETCHING; GAS MIXTURES; GRAPHITE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NUCLEATION; POLYSILANES; QUANTUM CHEMISTRY; SILICON CARBIDE; SILICON WAFERS; SINGLE CRYSTALS; SINTERING; SUBSTRATES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78751579134     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2010.11.035     Document Type: Article

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