Influence of growth rate on the epitaxial orientation and crystalline quality of CeO2 thin films grown on Al2O3(0001)

Journal of Applied Physics

Volumn 109, Issue 1, 2011, Pages

  Nandasiri, M I ^a,b   Nachimuthu, P ^b   Varga, T ^b   Shutthanandan, V ^b   Jiang, W ^b   Kuchibhatla, Satyanarayana V N T ^b   Thevuthasan, S ^b   Seal, S ^c   Kayani, A ^a  

^a WESTERN MICHIGAN UNIVERSITY   (United States)

^b PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF CENTRAL FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE QUALITY; EPITAXIAL ORIENTATIONS; EX SITU; GLANCING-INCIDENCE X-RAY DIFFRACTION; IN-PLANE; IN-SITU; OXYGEN PLASMAS; POLE FIGURE; POLYCRYSTALLINE; THREE-DIMENSIONAL (3D) ISLANDS; WELL-ALIGNED; XRD;

CRYSTALLITES; EPITAXIAL FILMS; EPITAXIAL GROWTH; GROWTH RATE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR OXYGEN; THREE DIMENSIONAL; X RAY DIFFRACTION;

FILM GROWTH;

EID: 78751495873     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3525558     Document Type: Article

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