Growth and structure of epitaxial Ce0.8Sm0.2O1.9 by oxygen-plasma-assisted molecular beam epitaxy

Journal of Crystal Growth

Volumn 310, Issue 10, 2008, Pages 2450-2456

  Yu, Z Q ^a   Kuchibhatla, Satyanarayana V N T ^b,c   Engelhard, M H ^b   Shutthanandan, V ^b   Wang, C M ^b   Nachimuthu, P ^b   Marina, O A ^b   Saraf, L V ^b   Thevuthasan, S ^b   Seal, S ^c  

^a NANJING NORMAL UNIVERSITY   (China)

^b PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF CENTRAL FLORIDA   (United States)

Author keywords

A1. Doping; A1. HRTEM; A1. XPS; A1. XRD; A3. Thin films; B1. CeO2; B1. Sapphire

Indexed keywords

MOLECULAR BEAM EPITAXY; PLASMAS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAPPHIRE; SINGLE CRYSTALS; THIN FILMS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

OXIDATION STATES;

CERIUM COMPOUNDS;

EID: 42249115329     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.12.028     Document Type: Article

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