Medium-voltage pulse width modulated current source rectifiers using different semiconductors: Loss and size comparison

IET Power Electronics

Volumn 3, Issue 2, 2010, Pages 243-258

  Abdelsalam, A K ^a   Masoud, M I ^a   Finney, S J ^a   Williams, B W ^a  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT SOURCE RECTIFIERS; DATA SHEETS; GATE COMMUTATED THYRISTORS; HIGH POWER APPLICATIONS; HIGH-VOLTAGES; MEDIUM VOLTAGE; SELECTIVE HARMONIC ELIMINATION; VOLTAGE APPLICATIONS; VOLTAGE SOURCE CONVERTERS; VOLTAGE SWITCHING;

ACTIVE FILTERS; BIPOLAR TRANSISTORS; ELECTRIC POTENTIAL; ELECTRIC SWITCHGEAR; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); PULSE WIDTH MODULATION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR SWITCHES; THYRISTORS;

ELECTRIC RECTIFIERS;

EID: 78651581034     PISSN: 17554535     EISSN: 17554543     Source Type: Journal    
DOI: 10.1049/iet-pel.2008.0252     Document Type: Article

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