Impurity deionization effects on surface recombination DC current-voltage characteristics in MOS transistors

Journal of Semiconductors

Volumn 31, Issue 12, 2010, Pages

  Zuhui, Chen ^a   Binbin, Jie ^b   Chihtang, Sah ^b,c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b XIAMEN UNIVERSITY   (China)

^c CTSAH Associates   (United States)

Author keywords

impurity deionization; interface traps; MOS transistors; recombination current

Indexed keywords

DC CURRENT; DEIONIZATION; DIRECT-CURRENT CURRENT-VOLTAGE; ELECTRON-HOLE RECOMBINATION; ELECTRONS AND HOLES; FERMI DISTRIBUTION; IMPURITY CONCENTRATION; INTERFACE TRAPS; MOS TRANSISTORS; RECOMBINATION CURRENTS; SHOCKLEY-READ-HALL RECOMBINATIONS; SURFACE RECOMBINATIONS;

HOLE CONCENTRATION; TRANSISTOR TRANSISTOR LOGIC CIRCUITS; TRANSISTORS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 78651482441     PISSN: 16744926     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-4926/31/12/121001     Document Type: Article

References (23)

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