High concentration effects of neutral-potential-well interface traps on recombination dc current-voltage lineshape in metal-oxide-silicon transistors

Journal of Applied Physics

Volumn 104, Issue 9, 2008, Pages

  Chen, Zuhui ^a   Jie, Bin B ^b   Sah, Chih Tang ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b PEKING UNIVERSITY   (China)

^c UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; CONCENTRATION (PROCESS); FIELD EFFECT TRANSISTORS; MOSFET DEVICES; SILICON; TRANSISTORS;

CHARGE STATES; DC CURRENTS; DEVICE PARAMETERS; DOPANT IMPURITIES; ENERGY DISTRIBUTIONS; HIGH CONCENTRATION EFFECTS; HIGH CONCENTRATIONS; HOLE RECOMBINATIONS; INTERFACE TRAPS; OXIDE THICKNESSES; SILICON ENERGIES; SILICON TRANSISTORS; SOURCE/DRAIN JUNCTIONS; SPATIAL VARIATIONS; SURFACE CHANNELS; SURFACE IMPURITIES; TRAP CONCENTRATIONS; TRAP DENSITIES;

HOLE CONCENTRATION;

EID: 56349107471     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2993916     Document Type: Article

References (19)

1. A. S. Grove, O. Leistiko, and C. -T. Sah, J. Appl. Phys. 0021-8979 10.1063/1.1713825 35, 2695 (1964).
2. B. E. Deal, A. S. Grove, E. H. Snow, and C. -T. Sah, J. Electrochem. Soc. 0013-4651 10.1149/1.2423529 112, 308 (1965).
3. S. Solmi, R. Angelucci, F. Cembali, M. Servidori, and M. Anderle, Appl. Phys. Lett. 0003-6951 10.1063/1.98431 51, 331 (1987).
4. Y. M. Kim, G. Q. Lo, H. Kinoshita, D. L. Kwong, H. H. Tseng, and R. Hance, J. Electrochem. Soc. 0013-4651 10.1149/1.2085728 138, 1122 (1991).
5. C. -T. Sah, Proc. IEEE 0018-9219 10.1109/5.16328 76, 1280 (1988).
6. C. -T. Sah, Proceedings of the Sixth International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2001, Vol. 1, pp. 1-15.
7. Y. Wang and C. -T. Sah, J. Appl. Phys. 0021-8979 10.1063/1.1396825 90, 3539 (2001).
8. A. Neugroschel, C. -T. Sah, K. M. Han, M. S. Carroll, T. Nishida, J. T. Kavalieros, and Y. Lu, IEEE Trans. Electron Devices 0018-9383 10.1109/16.405281 42, 1657 (1995).
9. C. -T. Sah, Proc. IRE 0096-8390 10.1109/JRPROC.1961.287763 49, 1623 (1961); C. -T. Sah, IRE Trans. Electron Devices 0096-2430 10.1109/T-ED.1962. 14895 9, 94 (1962).
10. C. -T. Sah, Properties of Silicon (INSPEC, IEE, London, England, 1988), p. 497.
11. C. -T. Sah, Fundamentals of Solid-State Electronics-Solution Manual (World Scientific, Singapore, 1996), pp. 107-108.
12. Z. Chen, B. B. Jie, and C. -T. Sah, J. Appl. Phys. 0021-8979 10.1063/1.2364621 100, 114511 (2006).
13. J. Bardeen, Phys. Rev. 71, 717 (1947). 0031-899X
14. J. C. Slater, Insulators Semiconductors and Metals Quantum Theory of Molecules and Solids (McGraw-Hill, New York, 1967), Vol. 3, pp. 292-307, see Wave Functions of Impurity Atoms in Appendix 2.
15. C. -T. Sah, R. N. Noyce, and W. Shockley, Proc. IRE 0096-8390 10.1109/JRPROC.1957.278528 45, 1228 (1957).
16. C. -T. Sah, Phys. Status Solidi A 0031-8965 10.1002/pssa.2210070229 7, 541 (1971).
17. C. -T. Sah, Proceedings of the NSTI-Nanotech 2005, May 2005, pp. 347-390.
18. C. -T. Sah, private communication (25 April 2007). This Sah interface-trap model was based on the perturbation from random change in the bond angle and bond length at the SiO2 /Si interface. The derivation is too long to include in this paper, and it will be presented in a future paper that will contain many models and Eq. is just one of them.
19. V. C.-W. Kuo, C.-M. Chao, C.-K. Kang, L.-W. Liu, T.-B. Huang, L.-T. Kuo, S-H. Chen, H.-C. Wei, H.-P. Hwang, and S. Pittikoun, Proceedings of the MTDT Conference, Taipei, August 2006, pp. 77-79.