Stress and interdiffusion during molecular beam epitaxy of Fe on As-rich GaAs(001)

Journal of Physics Condensed Matter

Volumn 23, Issue 4, 2011, Pages

  Ashraf, T ^a   Gusenbauer, C ^a   Stangl, J ^a   Hesser, G ^a   Wegscheider, M ^a   Koch, R ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE ALLOYS; GAAS(001); INTER-DIFFUSION; INTERDIFFUSION EFFECTS; INTERDIFFUSION PROCESS; OPTIMUM GROWTH TEMPERATURE; PSEUDOMORPHIC GROWTH;

GALLIUM ARSENIDE; GROWTH TEMPERATURE; IRON ALLOYS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING GALLIUM; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

GALLIUM ALLOYS;

EID: 78651476323     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/23/4/042001     Document Type: Article

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