Hydrodynamic simulations for advanced SiGe HBTs

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2010, Pages 237-244

  Wedel, G ^a   Schroter M ^b  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADVANCED SIMULATION; ANALYTICAL MODEL; BOLTZMANN TRANSPORT EQUATION; CALIBRATED MODEL; DEVICE PERFORMANCE; DRIFT-DIFFUSION MODEL; ELECTRON ENERGIES; EXPERIMENTAL DATA; HYDRODYNAMIC SIMULATION; LATEST DEVELOPMENT; SIGE HBTS; SILICON GERMANIUM; SIMULATION RESULT; TRANSPORT MODELS;

BOLTZMANN EQUATION; ELECTRON MOBILITY; FLUID DYNAMICS; GERMANIUM; HETEROJUNCTION BIPOLAR TRANSISTORS; HYDRODYNAMICS; MATHEMATICAL MODELS; SILICON ALLOYS; STANDARDIZATION;

COMPUTER SIMULATION;

EID: 78651395273     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/BIPOL.2010.5667955     Document Type: Conference Paper

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