On the feasibility of 500 GHz silicon-germanium HBTs

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2009, Pages

  Pawlak, A ^a   Schroter M ^a,b   Krause, J ^a   Wedel, G ^a   Jungemann, C ^c  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c BUNDESWEHR UNIVERSITY MUNICH   (Germany)

Author keywords

Device scaling; Device simulation; HICUM; SiGe heterojunction bipolar transistors

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; MICROWAVE CIRCUITS; MILLIMETER WAVE DEVICES; MILLIMETER WAVES; SEMICONDUCTING GERMANIUM; SILICON;

DEVICE SIMULATIONS; DEVICE-SCALING; HICUM; LATERAL DIMENSION; MM-WAVE APPLICATION; MM-WAVE CIRCUITS; SIGE HETEROJUNCTION BIPOLAR TRANSISTOR; SILICON GERMANIUM HBTS;

SI-GE ALLOYS;

EID: 74349091664     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2009.5290258     Document Type: Conference Paper

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