Local electric field investigation of Si2N2O and its electronic structure, elastic and optical properties

Journal of Alloys and Compounds

Volumn 509, Issue 5, 2011, Pages 1739-1743

  Zhang, Ting ^a   Wu, Mengqiang ^a   Zhang, Shuren ^a   Chen, Song ^a   He, Ming ^a   Wang, Jinming ^b   Zhang, Dahai ^b   He, Fengmei ^b   Li, Zhongping ^b  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b Aerospace Research Institute of Material and Process Technology   (China)

Author keywords

Additivity rule; Dielectric constant; First principles; Local electric field; Si2N2O

Indexed keywords

ADDITIVITY RULES; DIELECTRIC CONSTANTS; FIRST-PRINCIPLES; LOCAL ELECTRIC FIELD; SI2N2O;

ELECTRONIC STRUCTURE; OPTICAL PROPERTIES; PERMITTIVITY; SILICON;

ELECTRIC FIELDS;

EID: 78651358904     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2010.10.026     Document Type: Article

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