Effect of etching parameters on antireflection properties of Si subwavelength grating structures for solar cell applications

Applied Physics B: Lasers and Optics

Volumn 100, Issue 4, 2010, Pages 891-896

  Leem, J W ^a   Song, Y M ^b   Lee, Y T ^b   Yu, J S ^a  

^a Kyung Hee University   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANTI-REFLECTION; ETCH SELECTIVITY; ETCHING PARAMETERS; HOLOGRAPHIC LITHOGRAPHY; ICP ETCHING; INCIDENT LIGHT; NANO-SIZED PATTERNS; OPTICAL REFLECTION; OPTICAL REFLECTIVITY; PHOTORESIST MASK; RIGOROUS COUPLED WAVE ANALYSIS; SI LAYER; SI SOLAR CELLS; SI SUBSTRATES; SI SURFACES; SOLAR-CELL APPLICATIONS; SUB-WAVELENGTH STRUCTURES; SUBWAVELENGTH GRATING; WIDE ANGLE;

ETCHING; INDUCTIVELY COUPLED PLASMA; LITHOGRAPHY; OPTIMIZATION; PHOTORESISTS; REFLECTION;

SILICON;

EID: 78651355818     PISSN: 09462171     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00340-010-4128-1     Document Type: Article

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