Lattice location of nickel in diamond by RBS channelling and PIXE

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 1, 2011, Pages 42-46

  Drumm, Virginia S ^a   Alves, Andrew D C ^a   Orwa, Julius O ^a   Jamieson, David N ^a   McCallum, Jeffrey C ^a   Prawer, Steven ^a   Ryan, Chris C G ^b  

^a UNIVERSITY OF MELBOURNE   (Australia)

^b CSIRO   (Australia)

Author keywords

channelling; diamond; nickel; PIXE; RBS; X ray emission

Indexed keywords

CHANNELLING; COLOUR CENTRES; DETECTION THRESHOLD; DIAMOND GROWTH; DIAMOND LATTICES; GROWTH SECTORS; HIGH TEMPERATURE; ION CHANNELLING; LATTICE LOCATIONS; NI ATOMS; NI CATALYSTS; PARTICLE INDUCED X-RAY EMISSION; PIXE; POTENTIAL APPLICATIONS; QUANTUM INFORMATION TECHNOLOGIES; RBS; RUTHERFORD BACKSCATTERING SPECTROMETRY; X-RAY EMISSION;

COLOR; COLOR CENTERS; CRYSTAL LATTICES; ELECTROMAGNETIC WAVE EMISSION; ION BEAMS; IONS; NICKEL; OPTICAL CORRELATION; QUANTUM OPTICS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; X RAY SCATTERING; X RAYS;

DIAMONDS;

EID: 78651347935     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201026118     Document Type: Article

References (24)

1. B. Lounis, and, M. Orrit, Rep. Prog. Phys. 68, 1129 (2005).
2. J. O. Orwa, A. D. Greentree, I. Aharonovich, A. D. C. Alves, J. Van Donkelaar, A. Stacey, and, S. Prawer, J. Lumin. 130, 1646 (2010).
3. J. E. Lowther, Phys. Rev. B 51, 91 (1995).
4. Th. Pawlik, C. Noble, and, J.-M. Spaeth, J. Phys.: Condens. Matter 10, 9833 (1998).
5. R. Larico, J. F. Justo, W. V. M. Machado, and, L. V. C. Assali, Physica B 340, 84 (2003).
6. A. A. Bettiol, C. G. Ryan, D. N. Jamieson, and, S. Prawer, Nucl. Instrum. Methods B 181, 225 (2001).
7. J. Isoya, H. Kanda, and, Y. Uchida, Phys. Rev. B 42, 16 (1990).
8. J. M. Baker, J. Phys.: Condens. Matter 15, S2929 (2003).
9. J. P. Goss, P. R. Briddon, R. Jones, and, S. Oberg, J. Phys.: Condens. Matter 16, 4567 (2004).
10. W.-K. Chu, J. W. Mayer, and, M.-A. Nicolet, Backscattering Spectroscopy (Academic Press, San Diego, 1978), chap. 8.
11. M. Hasegawa, T. Teraji, and, S. Zoizumi, Appl. Phys. Lett. 79, 3068 (2001).
12. A. T. Collins, H. Kanda, and, R. C. Burns, Philos. Mag. B 61, 797 (1990).
13. D. J. Jamieson, Nucl. Instrum. Methods B 136, 1 (1998).
14. J. R. Tesmer, and, M. Natasi, Handbook of Modern Ion Beam Materials Analysis (Materials Research Society, Pittsburgh, 1995), chap. 10.
15. F. Watt, and, G. W. Grime, Principles and Applications of High-Energy Ion Microbeams (Adam Hilger, Bristol, 1987), p. 315.
16. F. Silva, J. Achard, O. Brinza, X. Bonnin, K. Hassouni, A. Anthonis, K. De Corte, and, J. Barjon, Diamond Relat. Mater. 18, 683 (2009).
17. Z. H. Zhang, X. T. Cui, and, W. K. Cui, Nucl. Instrum. Methods B 118, 739 (1996).
18. J. Pallon, C. G. Ryan, N. Arteaga Marrero, M. Elfmann, P. Kristiansson, E. J. C. Nilsson, and, C. Nilsson, Nucl. Instrum. Methods B 267, 2080 (2009).
19. J. F. Ziegler, The Stopping and Ranges of Ions in Matter (Pergamon, New York, 1977).
20. L. Z. Merz, L. C. Feldman, D. W. Mingay, and, W. M. Augustyniak, Ion Implantation in Semiconductors, edited by, I. Ruge, J. Graui, (Springer, Berlin, 1971), p. 182.
21. H. Hofsass, M. Dalmer, M. Restle, and, C. Ronning, J. Appl. Phys. 81, 6 (1997).
22. K. Bharuth-Ram, U. Wahl, and, J. G. Correia, Physica B 340, 89 (2003).
23. K. Bharuth-Ram, U. Wahl, and, J. G. Correla, Nucl. Instrum. Methods B 206, 941 (2003).
24. K. Bharuth-Ram, U. Vetter, H. Hofsass, C. Ronning, and, M. Dietrich, Nucl. Instrum. Methods B 190, 835 (2002).