Method and mechanism of vapor phase treatment-total reflection X-ray fluorescence for trace element analysis on silicon wafer surface

Spectrochimica Acta - Part B Atomic Spectroscopy

Volumn 65, Issue 12, 2010, Pages 1022-1028

  Takahara, Hikari ^a   Mori, Yoshihiro ^b   Shimazaki, Ayako ^c   Gohshi, Yohichi ^d  

^a RIGAKU CORPORATION   (Japan)

^b ISO TC201 WG2 ^*  (Japan)

^c TOSHIBA CORPORATION   (Japan)

^d UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Semiconductor; Silicon wafer; Trace metallic contamination analysis; TXRF; VPT

Indexed keywords

AFM; INTERNATIONAL ORGANIZATIONS; METALLIC CONTAMINATION; PRE-TREATMENT; PROCESS CONDITION; SAMPLE SURFACE; SEM; SEMICONDUCTOR; SIGNAL INTENSITIES; SILICON WAFER SURFACE; SURFACE OBSERVATION; TOP SURFACE; TOTAL REFLECTION X-RAY FLUORESCENCE; TRACE ELEMENT ANALYSIS; TRACE METAL ANALYSIS; TRACE METALLIC CONTAMINATION ANALYSIS; TXRF; VAPOR-PHASE TREATMENT; VPT; WORKING GROUPS;

CONTAMINATION; ELECTROMAGNETIC WAVE REFLECTION; FLUORESCENCE; FLUORESCENCE SPECTROSCOPY; HYDROFLUORIC ACID; INTERNATIONAL COOPERATION; METAL ANALYSIS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; TRACE ANALYSIS; TRACE ELEMENTS; VAPORS;

SILICON WAFERS;

EID: 78651268497     PISSN: 05848547     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sab.2010.11.006     Document Type: Article

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