Analysis of low metallic contamination on silicon wafer surfaces by vapor-phase treatment and total reflection X-ray fluorescence analysis

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 12, 2006, Pages 9037-9043

  Shimazaki, Ayako ^a   Miyazaki, Kunihiro ^a   Matsumura, Tsuyoshi ^a   Ito, Shoko ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Metallic contamination; Metallic impurity; Silicon wafer; Total reflection; Vapor phase decomposition; X ray fluorescence

Indexed keywords

CRYSTAL IMPURITIES; SURFACE TREATMENT; ULSI CIRCUITS; X RAY ANALYSIS;

METALLIC CONTAMINATION; METALLIC IMPURITY; TOTAL REFLECTION; VAPOR-PHASE TREATMENT (VPT);

SILICON WAFERS;

EID: 34547917643     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.9037     Document Type: Article

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