First principles calculations of the scattering cross section of substitutional carbon in silicon

Journal of Physics: Conference Series

Volumn 242, Issue , 2010, Pages

  Vaughan, M P ^a   Fahy, S ^a,b  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATION THEORY; ELECTRONIC STRUCTURE; GERMANIUM ALLOYS; SI-GE ALLOYS; SILICON ALLOYS;

ALLOY SCATTERING; FIRST PRINCIPLES ELECTRONIC STRUCTURE; FIRST-PRINCIPLES CALCULATION; SCATTERING CROSS SECTION; SCATTERING MECHANISMS; SCATTERING RATES;

CALCULATIONS;

EID: 78651235738     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/242/1/012003     Document Type: Conference Paper

References (14)

1. Jain S, Osten H, Dietrich B and Rücker H 1995 Semicond. Sci. Tech. 10 1289-1302
2. Osten H, Rücker H, Liu J and Heinemann B 2001 Microelectron. Eng. 56 209-212
3. Tan C, Chor E, Liu J, Lee H, Quek E and Chan L 2003 Appl. Phys. Lett. 83 4169
4. Osten H and Gaworzewski P 1997 J. Appl. Phys. 82 4977-4981
5. Murphy-Armando F and Fahy S 2006 Phys. Rev. Lett. 97 96606
6. Murphy-Armando F and Fahy S 2008 Phys. Rev. B 78 35202
7. Joyce S, Murphy-Armando F and Fahy S 2007 Phys. Rev. B 75 155201
8. Gonze X, Beuken J, Caracas R, Detraux F, Fuchs M, Rignanese G, Sindic L, Verstraete M, Zerah G, Jollet F et al 2002 Comput. Materials Sci. 25 478-492
9. Troullier N and Martins J 1991 Phys. Rev. B 43 1993-2006
10. Broyden C 1967 Math. Comput. 21 368-381
11. Goldfarb D 1970 Math. Comput. 24 23-26
12. Shanno D 1970 Math. Comput. 24 647-656
13. Schlegel H 1982 J. Comput. Chem. 3 214-218
14. Skierbiszewski C, Perlin P, Wisniewski P, Suski T, Walukiewicz W, Shan W, Ager J, Haller E, Geisz J, Friedman D et al 1999 physica status solidi(b) 216 135-139