The imaging mechanism of single-walled carbon nanotubes on Si/SiO2 wafer in scanning electron microscopy

Journal of Microscopy

Volumn 241, Issue 2, 2011, Pages 188-194

  Zhang, Lijie ^a   Gao, Fenglei ^a   Huang, Shaoming ^a  

^a WENZHOU UNIVERSITY   (China)

Author keywords

Electron beam induced emission; Imaging mechanism; Scanning electron microscopy; Single walled carbon nanotubes; Voltage contrast

Indexed keywords

ELECTRIC FIELDS; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; ELECTRONS; IMAGE ENHANCEMENT; SILICA; SILICON WAFERS; SINGLE-WALLED CARBON NANOTUBES (SWCN); YARN;

ELECTRON BEAM INDUCED EMISSION; ELECTRON-BEAM; EXTERNAL ELECTRIC FIELD; IMAGE CONTRASTS; IMAGING MECHANISM; MICROSCOPY IMAGING; PRIMARY BEAM ENERGIES; SINGLE-WALLED CARBON; SINGLE-WALLED CARBON NANOTUBE; VOLTAGE CONTRAST;

SCANNING ELECTRON MICROSCOPY;

CONTRAST MEDIUM; SILICON DIOXIDE; SINGLE WALLED NANOTUBE;

ARTICLE; DISPLAY SYSTEM; ELECTRIC FIELD; ELECTRIC POTENTIAL; ELECTRON BEAM; ENERGY RESOURCE; IMAGE ANALYSIS; IMAGE ENHANCEMENT; IMAGE QUALITY; PARTICLE SIZE; PRIORITY JOURNAL; SCANNING ELECTRON MICROSCOPY;

EID: 78651231670     PISSN: 00222720     EISSN: 13652818     Source Type: Journal    
DOI: 10.1111/j.1365-2818.2010.03422.x     Document Type: Article

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