Low stress PECVD amorphous silicon carbide for MEMS applications

Proceedings of the International Semiconductor Conference, CAS

Volumn 1, Issue , 2010, Pages 239-242

  Avram, Marioara ^a   Avram, Andrei ^a   Bragaru, Adina ^a   Chen, Bangtao ^b   Poenar, Daniel Puiu ^c   Iliescu, Ciprian ^b  

^a NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

^b INSTITUTE OF BIOENGINEERING AND NANOTECHNOLOGY   (Singapore)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

PECVD; Residual stress; Silicon carbide

Indexed keywords

ALKALINE SOLUTIONS; ANNEALING EFFECTS; ETCHING RATE; HIGH DEPOSITION RATES; LOW ETCHING RATES; LOW STRESS; LOW-FREQUENCY MODES; MAIN PARAMETERS; MASKING LAYERS; MEMS APPLICATIONS; PECVD; PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITIONS; RF FREQUENCIES;

AMORPHOUS FILMS; DRY ETCHING; HYDROFLUORIC ACID; ION BOMBARDMENT; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA ETCHING; POTASSIUM HYDROXIDE; RESIDUAL STRESSES; SILICON CARBIDE;

AMORPHOUS SILICON;

EID: 78651075858     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMICND.2010.5650647     Document Type: Conference Paper

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