Si ion implantation-induced defect photoluminescence in silica films

Advanced Materials Research

Volumn 160-162, Issue , 2011, Pages 1450-1457

  Zhao, Yong ^a   Hou, Shuo ^a   Liang, Xiaojun ^a   Fang, Liguang ^a   Sheng, Guanghu ^a   Xu, Fei ^b  

^a NANCHANG UNIVERSITY   (China)

^b SHANGHAI UNIVERSITY   (China)

Author keywords

Defect photoluminescence; Ion implantation; Irradiation damage; Silicon oxide

Indexed keywords

DRY AND WET; DRY OXIDATION; IMPLANTATION ENERGIES; IMPLANTATION-INDUCED DEFECTS; INFLUENCE MECHANISM; IRRADIATION DAMAGE; METAL VAPOR VACUUM ARCS; OXYGEN HOLE CENTERS; PEROXY RADICALS; PHOTOLUMINESCENCE BANDS; PL BANDS; ROOM TEMPERATURE; SI NANOCRYSTAL; SILICA FILM; SILICON ION; WET OXIDATION; XRD;

DEFECTS; ION SOURCES; IRRADIATION; NANOCRYSTALS; OXIDATION; OXYGEN; PHOTOLUMINESCENCE; SILICA; SILICON; SILICON OXIDES; VACUUM APPLICATIONS; VAPORS;

ION IMPLANTATION;

EID: 78650962170     PISSN: 10226680     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/AMR.160-162.1450     Document Type: Conference Paper

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