Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device

Applied Physics Letters

Volumn 97, Issue 26, 2010, Pages

  Wang, K Y ^a,b   Edmonds, K W ^a,c   Irvine, A C ^d   Tatara, G ^e   De Ranieri, E ^b,d   Wunderlich, J ^b   Olejnik, K ^b   Rushforth, A W ^c   Campion, R P ^e   Williams, D A ^b   Foxon, C T ^c   Gallagher, B L ^c  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b HITACHI CAMBRIDGE LABORATORY   (United Kingdom)

^c UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^e TOKYO METROPOLITAN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT-DRIVEN; DOMAIN WALL MOTION; DOMAIN-WALL PINNING; FERROMAGNETIC SEMICONDUCTOR; FERROMAGNETIC TRANSITION TEMPERATURES; SPIN ORBIT INTERACTIONS; SPIN TRANSFER TORQUE; STRAIN-RELAXED BUFFER LAYERS; TEMPERATURE RANGE; THEORETICAL PREDICTION;

FERROMAGNETIC MATERIALS; FERROMAGNETISM; MANGANESE; SWITCHING; WALLS (STRUCTURAL PARTITIONS);

MAGNETIC DOMAINS;

EID: 78650914859     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3532095     Document Type: Article

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