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Volumn 97, Issue 26, 2010, Pages

Electrical study of trapped charges in nanoscale Ge islands by Kelvin probe force microscopy for nonvolatile memory applications

(4) Lin, Z a Brunkov, P b Bassani, F c Bremond, G a

a INSTITUT DES NANOTECHNOLOGIES DE LYON (France)

b IOFFE INSTITUTE (Russian Federation)

c AIX MARSEILLE UNIVERSITÉ (France)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; PROBES; SILICA; SURFACE POTENTIAL; SURFACE PROPERTIES;

DIELECTRIC LAYER; ELECTRICAL STUDIES; GE ISLAND; IMAGE CONTRASTS; INJECTED ELECTRONS; KELVIN PROBE FORCE MICROSCOPY; LOCAL CHARGE; NANO SCALE; NANOISLAND; NEGATIVE BIAS; NON-VOLATILE MEMORIES; NON-VOLATILE MEMORY APPLICATION; POTENTIAL VARIATIONS; RETENTION TIME; ROOM TEMPERATURE; SILICON DIOXIDE; TRAPPED CHARGE;

SILICON OXIDES;

EID: 78650885141 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3533259 Document Type: Article

Times cited : (13)

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