High-frequency effects in carbon nanotube interconnects and implications for on-chip inductor design

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Li, Hong ^a   Banerjee, Kaustav ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBE INTERCONNECTS; CONVENTIONAL METALS; CU-BASED; CURRENT REDISTRIBUTIONS; FREQUENCY DEPENDENTS; HIGH QUALITIES; HIGH-FREQUENCY APPLICATIONS; HIGH-FREQUENCY EFFECTS; MULTI-WALLED CARBON NANOTUBES; ON-CHIP INDUCTORS; PERFORMANCE ANALYSIS; PROMISING MATERIALS; Q FACTORS; RESISTANCE AND INDUCTANCES; SIGNAL CIRCUITS; SINGLE-WALLED;

ELECTRIC CONDUCTORS; ELECTRIC INDUCTORS; ELECTRON DEVICES; INTERCONNECTION NETWORKS; MULTIWALLED CARBON NANOTUBES (MWCN); QUALITY CONTROL; SINGLE-WALLED CARBON NANOTUBES (SWCN);

CARBON NANOTUBES;

EID: 64549164513     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796741     Document Type: Conference Paper

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