Research on the boron contamination at the p/i interface of microcrystalline silicon solar cells deposited in a single PECVD chamber

Chinese Physics B

Volumn 18, Issue 10, 2009, Pages 4558-4563

  Zhang, Xiao Dan ^a   Sun, Fu He ^a   Wei, Chang Chun ^a   Sun, Jian ^a   Zhang, De Kun ^a   Geng, Xin Hua ^a   Xiong, Shao Zhen ^a   Zhao, Ying ^a  

^a NANKAI UNIVERSITY   (China)

Author keywords

Boron contamination; Microcrystalline silicon; Single chamber; Solar cells

Indexed keywords

BORON CONTAMINATION; COVERING LAYER; CRYSTALLINE VOLUME FRACTION; DEPTH PROFILE; HYDROGEN PLASMA TREATMENTS; I-LAYER; SECONDARY ION MASS SPECTROSCOPY; SINGLE CHAMBER; SOLAR CELL MANUFACTURE;

BORON; BORON COMPOUNDS; CELL MEMBRANES; CONTAMINATION; HYDROGEN; PHASE INTERFACES; PHOTOVOLTAIC CELLS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; SECONDARY ION MASS SPECTROMETRY; SOLAR CELLS; SOLAR POWER GENERATION; VOLTAGE DIVIDERS;

MICROCRYSTALLINE SILICON;

EID: 70350436328     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/18/10/077     Document Type: Article

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