SCOPUS 정보 검색 플랫폼

Volumn 95, Issue 16, 2009, Pages

10 μm minority-carrier diffusion lengths in Si wires synthesized by Cu-catalyzed vapor-liquid-solid growth

(6) Putnam, Morgan C a Turner Evans, Daniel B a Kelzenberg, Michael D a Boettcher, Shannon W a Lewis, Nathan S a Atwater, Harry A a

a CALIFORNIA INSTITUTE OF TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT CONDITIONS; CARRIER DIFFUSION LENGTH; GROWTH PROCESS; HIGH EFFICIENCY; PHOTOGENERATED CARRIERS; SURFACE PASSIVATION; SURFACE RECOMBINATIONS; SURFACE STATE; VAPOR-LIQUID-SOLID GROWTH;

DIFFUSION; LIQUIDS; PASSIVATION; PHOTOVOLTAIC CELLS; SILICON; VAPORS; WIRE;

SURFACE DIFFUSION;

EID: 70350431281 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3247969 Document Type: Article

Times cited : (78)

References (16)

1
- 34548497849
- Growth of vertically aligned Si wire arrays over large areas (>1 cm2) with Au and Cu catalysts
- DOI 10.1063/1.2779236
- B. M. Kayes, M. A. Filler, M. C. Putnam, M. D. Kelzenberg, N. S. Lewis, and H. A. Atwater, Appl. Phys. Lett. 0003-6951 91, 103110 (2007). 10.1063/1.2779236 (Pubitemid 47379063)
- (2007) Applied Physics Letters , vol.91 , Issue.10 , pp. 103110
- Kayes, B.M.¹ Filler, M.A.² Putnam, M.C.³ Kelzenberg, M.D.⁴ Lewis, N.S.⁵ Atwater, H.A.⁶

2
- 20544449654
- Comparison of the device physics principles of planar and radial p-n junction nanorod solar cells
- DOI 10.1063/1.1901835, 114302
- B. M. Kayes, H. A. Atwater, and N. S. Lewis, J. Appl. Phys. 0021-8979 97, 114302 (2005). 10.1063/1.1901835 (Pubitemid 40844795)
- (2005) Journal of Applied Physics , vol.97 , Issue.11 , pp. 1-11
- Kayes, B.M.¹ Atwater, H.A.² Lewis, N.S.³

3
- 40449090496
- Photovoltaic measurements in single-nanowire silicon solar cells
- DOI 10.1021/nl072622p
- M. D. Kelzenberg, D. B. Turner-Evans, B. M. Kayes, M. A. Filler, M. C. Putnam, N. S. Lewis, and H. A. Atwater, Nano Lett. 1530-6984 8, 710 (2008). 10.1021/nl072622p (Pubitemid 351346044)
- (2008) Nano Letters , vol.8 , Issue.2 , pp. 710-714
- Kelzenberg, M.D.¹ Turner-Evans, D.B.² Kayes, B.M.³ Filier, M.A.⁴ Putnam, M.C.⁵ Lewis, N.S.⁶ Atwater, H.A.⁷

4
- 58449135554
- 0935-9648,. 10.1002/adma.200802006
- K. E. Plass, M. A. Filler, J. M. Spurgeon, B. M. Kayes, S. Maldonado, H. A. Atwater, and N. S. Lewis, Adv. Mater. (Weinheim, Ger.) 0935-9648 21, 325 (2009). 10.1002/adma.200802006
- (2009) Adv. Mater. (Weinheim, Ger.) , vol.21 , pp. 325
- Plass, K.E.¹ Filler, M.A.² Spurgeon, J.M.³ Kayes, B.M.⁴ Maldonado, S.⁵ Atwater, H.A.⁶ Lewis, N.S.⁷

5
- 40449097569
- High-resolution detection of Au catalyst atoms in Si nanowires
- DOI 10.1038/nnano.2008.5, PII NNANO20085
- J. E. Allen, E. R. Hemesath, D. E. Perea, J. L. Lensch-Falk, Z. Y. Li, F. Yin, M. H. Gass, P. Wang, A. L. Bleloch, R. E. Palmer, and L. J. Lauhon, Nat. Nanotechnol. 1748-3387 3, 168 (2008). 10.1038/nnano.2008.5 (Pubitemid 351355141)
- (2008) Nature Nanotechnology , vol.3 , Issue.3 , pp. 168-173
- Allen, J.E.¹ Hemesath, E.R.² Perea, D.E.³ Lensch-Falk, J.L.⁴ Li, Z.Y.⁵ Yin, F.⁶ Gass, M.H.⁷ Wang, P.⁸ Bleloch, A.L.⁹ Palmer, R.E.¹⁰ Lauhon, L.J.¹¹

6
- 56149106545
- 1530-6984,. 10.1021/nl801234y
- M. C. Putnam, M. A. Filler, B. M. Kayes, M. D. Kelzenberg, Y. B. Guan, N. S. Lewis, J. M. Eiler, and H. A. Atwater, Nano Lett. 1530-6984 8, 3109 (2008). 10.1021/nl801234y
- (2008) Nano Lett. , vol.8 , pp. 3109
- Putnam, M.C.¹ Filler, M.A.² Kayes, B.M.³ Kelzenberg, M.D.⁴ Guan, Y.B.⁵ Lewis, N.S.⁶ Eiler, J.M.⁷ Atwater, H.A.⁸

7
- 0000338325
- 0038-1101,. 10.1016/0038-1101(66)90085-2
- W. M. Bullis, Solid-State Electron. 0038-1101 9, 143 (1966). 10.1016/0038-1101(66)90085-2
- (1966) Solid-State Electron. , vol.9 , pp. 143
- Bullis, W.M.¹

8
- 0000999007
- Recombination activity of copper in silicon
- DOI 10.1063/1.1415350
- R. Sachdeva, A. A. Istratov, and E. R. Weber, Appl. Phys. Lett. 0003-6951 79, 2937 (2001). 10.1063/1.1415350 (Pubitemid 33608105)
- (2001) Applied Physics Letters , vol.79 , Issue.18 , pp. 2937-2939
- Sachdeva, R.¹ Istratov, A.A.² Weber, E.R.³

9
- 70350427123
- See EPAPS supplementary material at E-APPLAB-95-070941 for further information on device fabrication, characterization, and analysis.
- See EPAPS supplementary material at http://dx.doi.org/10.1063/1.3247969 E-APPLAB-95-070941 for further information on device fabrication, characterization, and analysis.

10
- 0016557326
- 0021-8979,. 10.1063/1.322149
- E. J. Charlson and J. C. Lien, J. Appl. Phys. 0021-8979 46, 3982 (1975). 10.1063/1.322149
- (1975) J. Appl. Phys. , vol.46 , pp. 3982
- Charlson, E.J.¹ Lien, J.C.²

11
- 0003839459
- (Interscience, New York),.
- A. Many, Y. Goldstein, and N. B. Grover, Semiconductor Surfaces (Interscience, New York, 1965), p. 408.
- (1965) Semiconductor Surfaces , pp. 408
- Many, A.¹ Goldstein, Y.² Grover, N.B.³

12
- 31044449712
- Surface charge density of unpassivated and passivated metal-catalyzed silicon nanowires
- DOI 10.1149/1.2159295
- K. I. Seo, S. Sharma, A. A. Yasseri, D. R. Stewart, and T. I. Kamins, Electrochem. Solid-State Lett. 1099-0062 9, G69 (2006). 10.1149/1.2159295 (Pubitemid 43121737)
- (2006) Electrochemical and Solid-State Letters , vol.9 , Issue.3
- Seo, K.-I.¹ Sharma, S.² Yasseri, A.A.³ Stewart, D.R.⁴ Kamins, T.I.⁵

13
- 0004071496
- 3rd ed. (Wiley, New York),.
- D. K. Schroder, Semiconductor Material and Device Characterization, 3rd ed. (Wiley, New York, 2006), p. 319.
- (2006) Semiconductor Material and Device Characterization , pp. 319
- Schroder, D.K.¹

14
- 17144410348
- Influence of surface states on electron transport through intrinsic Ge nanowires
- DOI 10.1021/jp044491b
- T. Hanrath and B. A. Korgel, J. Phys. Chem. B 1089-5647 109, 5518 (2005). 10.1021/jp044491b (Pubitemid 40519451)
- (2005) Journal of Physical Chemistry B , vol.109 , Issue.12 , pp. 5518-5524
- Hanrath, T.¹ Korgel, B.A.²

15
- 40449137533
- 0277-786X.
- F. Daiminger, A. Schmidt, F. Faller, and A. Forchel, Proc. SPIE 0277-786X 2139, 213 (1994).
- (1994) Proc. SPIE , vol.2139 , pp. 213
- Daiminger, F.¹ Schmidt, A.² Faller, F.³ Forchel, A.⁴

16
- 70350414966
- Proceedings of the 34th IEEE PVSC, (unpublished).
- M. D. Kelzenberg, M. C. Putnam, D. B. Turner-Evans, N. S. Lewis, and H. A. Atwater, Proceedings of the 34th IEEE PVSC, 2009 (unpublished).
- (2009)
- Kelzenberg, M.D.¹ Putnam, M.C.² Turner-Evans, D.B.³ Lewis, N.S.⁴ Atwater, H.A.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.