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Applied Physics A: Materials Science and Processing

Volumn 101, Issue 4, 2010, Pages 651-654

Influence of oxygen pressure on the ferroelectric properties of BiFeO 3 thin films on LaNiO3/Si substrates via laser ablation

(4) Yan, F a Zhu, T J b Lai, M O a Lu, L a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

b ZHEJIANG UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

BFO FILMS; BOTTOM ELECTRODES; COERCIVE FIELD; FERROELECTRIC PROPERTY; FILM DEPOSITION; INFLUENCE OF OXYGEN; OXYGEN PARTIAL PRESSURE; OXYGEN PRESSURE; PULSED LASER ABLATION; REMANENT POLARIZATION; SATURATED HYSTERESIS LOOPS; SI SUBSTRATES;

DIELECTRIC PROPERTIES; HYSTERESIS; LASER ABLATION; LASER APPLICATIONS; OXIDE FILMS; OXYGEN; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION;

PULSED LASERS;

EID: 78650618160 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-010-5918-3 Document Type: Article

Times cited : (20)

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