Uniaxial-stress effects on electronic structures of monolayer and bilayer graphenes

Synthetic Metals

Volumn 160, Issue 23-24, 2010, Pages 2435-2441

  Lee, S H ^a   Chiu, C W ^a   Ho, Y H ^b   Lin, M F ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

Deformation effect; Electronic property; Monolayer and bilayer graphenes; Zero gap semimetal semiconductor transition

Indexed keywords

BAND EDGE; BI-LAYER; DEFORMATION EFFECTS; DENSITY OF STATE; ELASTICITY THEORY; ENERGY DISPERSIONS; ENERGY SPLIT; EXPERIMENTAL MEASUREMENTS; FERMI MOMENTA; GRAPHENE LATTICES; GRAPHENES; INTERLAYER INTERACTIONS; LOW ENERGIES; MECHANICAL EFFECTS; SEMI-METALS; SEMICONDUCTOR TRANSITION; SPECIAL STRUCTURE; STACKING SEQUENCE; STRESS EFFECTS; TIGHT BINDING MODEL; UNIAXIAL STRESS;

BAND STRUCTURE; DEFORMATION; ELECTRONIC STRUCTURE; GRAPHENE; MONOLAYERS;

ELECTRONIC PROPERTIES;

EID: 78650586602     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2010.09.023     Document Type: Article

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