Magnetoelectronic properties of the AB-stacked graphite

Carbon

Volumn 43, Issue 7, 2005, Pages 1424-1431

  Chang, C P ^a   Lu, C L ^b   Shyu, F L ^c   Chen, R B ^d   Huang, Y C ^b,e   Lin, M F ^b  

^a Tainan Woman's College of Arts and Technology   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c DEPARTMENT OF PHYSICS   (Taiwan)

^d NATIONAL KAOHSIUNG UNIVERSITY OF APPLIED SCIENCES   (Taiwan)

^e KAO YUAN INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

Electronic properties; Graphite; Modeling

Indexed keywords

ANISOTROPY; ELECTRONIC PROPERTIES; FERMI LEVEL; HAMILTONIANS; MAGNETIC FIELD EFFECTS; MAGNETOELECTRIC EFFECTS; MATHEMATICAL MODELS; VAN DER WAALS FORCES;

DENSITY OF STATES (DOS); ENERGY DISPERSIONS; FIRST BRILLOUIN ZONE (FBZ); GRAPHITE CRYSTALS;

GRAPHITE;

EID: 17844370220     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2005.01.012     Document Type: Article

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