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Volumn 160, Issue 23-24, 2010, Pages 2628-2630

Leakage conduction mechanism of top-contact organic thin film transistors

Author keywords

Leakage conduction; Organic semiconductor; Organic thin film transistors; Schottky emission

Indexed keywords

APPLIED VOLTAGES; DEVICE OPERATIONS; DEVICE PERFORMANCE; GATE-LEAKAGE CURRENT; GATE-LEAKAGE EFFECTS; LEAKAGE CONDUCTION; LEAKAGE CONDUCTION MECHANISM; ORGANIC SEMICONDUCTOR; ORGANIC THIN FILM TRANSISTORS; SCHOTTKY EMISSIONS; TOP-CONTACT DEVICES;

EID: 78650586600     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2010.10.015     Document Type: Article
Times cited : (16)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.