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Volumn 160, Issue 23-24, 2010, Pages 2628-2630
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Leakage conduction mechanism of top-contact organic thin film transistors
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Author keywords
Leakage conduction; Organic semiconductor; Organic thin film transistors; Schottky emission
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Indexed keywords
APPLIED VOLTAGES;
DEVICE OPERATIONS;
DEVICE PERFORMANCE;
GATE-LEAKAGE CURRENT;
GATE-LEAKAGE EFFECTS;
LEAKAGE CONDUCTION;
LEAKAGE CONDUCTION MECHANISM;
ORGANIC SEMICONDUCTOR;
ORGANIC THIN FILM TRANSISTORS;
SCHOTTKY EMISSIONS;
TOP-CONTACT DEVICES;
LEAKAGE CURRENTS;
THIN FILMS;
THIN FILM TRANSISTORS;
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EID: 78650586600
PISSN: 03796779
EISSN: None
Source Type: Journal
DOI: 10.1016/j.synthmet.2010.10.015 Document Type: Article |
Times cited : (16)
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References (20)
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