Impact of the channel direction on the 1/f noise in SOI-MOSFETs fabricated on (100) and (110) silicon oriented wafers

AIP Conference Proceedings

Volumn 922, Issue , 2007, Pages 43-46

  Gaubert, P ^a   Cheng, W ^a   Teramoto, A ^a   Ohmi, T ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

1 f noise; channel direction; silicon; SOI MOSFET; surface orientation

Indexed keywords

EID: 78650536981     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2759633     Document Type: Conference Paper

References (6)

1. P. Gaubert, A. Teramoto, T. Hamada, M. Yamamoto, K. Kotani and T. Ohmi, IEEE Trans. Electron Devices, 53(4), 2006, pp. 851-856.
2. P. Gaubert, A. Teramoto, T. Hamada, M. Yamamoto, K. Nii, H. Akahori, K. Kotani andT. Ohmi, ICNF 2005 Conference Proceedings, 2005, pp. 199-202.
3. M. Marin, J.C. Vildeuil, B. Tavel, B. Duriez, F. Arnaud, P. Stolk and M. Woo, ICNF 2005 Conference Proceedings, 2005, pp. 195-198.
4. T. Komoda, A. Oishi, T. Sanuki, K. Kasai, K. Ohno, M. Iwai, M. Saito, F. Matsuoka, N. Nagashima and T. Noguchi, , Electron Device Meeting, 2004, IEDM Technical Digest. IEEE International, 2004, pp. 217-220.
5. H. Sayama, Y. Nishida, H. Oda, S. Shimizu, T. Kunikiyo, K. Sonoda, Y. Inoue and M. Inuishi, Electron Device Meeting, 2004, IEDM Technical Digest. IEEE International, 1999, pp. 657-660.
6. T. Sato, Y. Takeishi andH. Hara, Physical Review B, 4(6), 1971, pp. 1950-1960.