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Volumn 56, Issue 3, 2011, Pages 1172-1181

Electrochemical properties of N-doped hydrogenated amorphous carbon films fabricated by plasma-enhanced chemical vapor deposition methods

Author keywords

Electrochemical properties; Nitrogen doped hydrogenated amorphous carbon; Plasma enhanced chemical vapor deposition

Indexed keywords

ATOMIC RATIO; BEFORE AND AFTER; BORON DOPED DIAMOND; CARBON AND NITROGEN SOURCES; CHARGE-TRANSFER RATE; CHEMICAL INERTNESS; DLC COATINGS; DOUBLE-LAYER CAPACITANCE; ELECTRICAL RESISTIVITY; ELECTROCHEMICAL ACTIVITIES; HIGH DURABILITY; HIGH RESISTANCE; HYDROGENATED AMORPHOUS CARBON; HYDROGENATED AMORPHOUS CARBON FILMS; INNER SURFACES; MICROWAVE-ASSISTED; N-DOPED; NITROGEN-DOPED; OPTICAL GAP; OXIDATIVE TREATMENT; PET BOTTLES; PHYSICAL STABILITY; POLARIZABLE ELECTRODES; POTENTIAL RANGE; POTENTIAL WINDOWS; REDOX SPECIES; STANDARD POTENTIAL; STRONG ACIDS; SURFACE OXIDATIONS;

EID: 78650513397     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.electacta.2010.11.006     Document Type: Article
Times cited : (70)

References (39)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.