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Volumn 56, Issue 3, 2011, Pages 1172-1181
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Electrochemical properties of N-doped hydrogenated amorphous carbon films fabricated by plasma-enhanced chemical vapor deposition methods
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Author keywords
Electrochemical properties; Nitrogen doped hydrogenated amorphous carbon; Plasma enhanced chemical vapor deposition
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Indexed keywords
ATOMIC RATIO;
BEFORE AND AFTER;
BORON DOPED DIAMOND;
CARBON AND NITROGEN SOURCES;
CHARGE-TRANSFER RATE;
CHEMICAL INERTNESS;
DLC COATINGS;
DOUBLE-LAYER CAPACITANCE;
ELECTRICAL RESISTIVITY;
ELECTROCHEMICAL ACTIVITIES;
HIGH DURABILITY;
HIGH RESISTANCE;
HYDROGENATED AMORPHOUS CARBON;
HYDROGENATED AMORPHOUS CARBON FILMS;
INNER SURFACES;
MICROWAVE-ASSISTED;
N-DOPED;
NITROGEN-DOPED;
OPTICAL GAP;
OXIDATIVE TREATMENT;
PET BOTTLES;
PHYSICAL STABILITY;
POLARIZABLE ELECTRODES;
POTENTIAL RANGE;
POTENTIAL WINDOWS;
REDOX SPECIES;
STANDARD POTENTIAL;
STRONG ACIDS;
SURFACE OXIDATIONS;
AMORPHOUS CARBON;
ASTATINE;
BEVERAGES;
BORON;
CARBON FILMS;
CERIUM;
CERIUM COMPOUNDS;
CHARGE TRANSFER;
CHEMICAL STABILITY;
DEPOSITION;
ELECTRIC CONDUCTIVITY;
ELECTROCHEMICAL ELECTRODES;
ELECTROCHEMICAL PROPERTIES;
HYDROCARBONS;
HYDROGENATION;
ION EXCHANGE;
NITROGEN;
NITROGEN PLASMA;
OXIDATION;
PLASMA DEPOSITION;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
REDOX REACTIONS;
SURFACES;
THIN FILMS;
VAPOR DEPOSITION;
AMORPHOUS FILMS;
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EID: 78650513397
PISSN: 00134686
EISSN: None
Source Type: Journal
DOI: 10.1016/j.electacta.2010.11.006 Document Type: Article |
Times cited : (70)
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References (39)
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