Observation of photocurrent from band-to-band excitation of semiconducting p-type diamond thin film electrodes

Journal of the Electrochemical Society

Volumn 144, Issue 6, 1997, Pages

  Boonma, L ^a   Yano, T ^a   Tryk, D A ^a   Hashimoto, K ^a   Fujishima, A ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTROCHEMICAL ELECTRODES; ELECTROCHEMISTRY; ENERGY GAP; EXCIMER LASERS; PHOTOCHEMICAL REACTIONS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; THIN FILM DEVICES;

MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION; PHOTOCURRENTS;

DIAMOND FILMS;

EID: 0031168211     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837704     Document Type: Article

References (40)

1. W. B. Wilson, Phys. Rev., 127, 1549 (1962).
2. A. T. Collins and A. W. S. Williams, J. Phys. C: Solid State Phys., 4, 1789 (1971).
3. R. M. Chrenko, Phys. Rev. B, 7, 4560 (1973).
4. K. Okano, H. Naruki, Y. Akiba, T. Kurosu, M. Iida, and Y. Hirose, Jpn. J. Appl. Phys., 27, L173 (1988).
5. K. Okano, H. Naruki, Y. Akiba, T. Kurosu, M. Iida, Y. Hirose, and T. Nakamura, Jpn. J. Appl. Phys., 28, 1066 (1989).
6. J. Mort, D. Kuhman, M. Machonkin, M. Morgan, F. Jansen, K. Okumura, Y. M. LeGrice, and R. J. Nemanich, Appl. Phys. Lett., 55, 1121 (1989).
7. J. W. Strojek, M. C. Granger, G. M. Swain, T. Dallas, and M. W. Holtz, Anal. Chem., 68, 2031 (1996).
8. G. W. Swain, This Journal, 141, 3382 (1994).
9. R. Tenne, K. Patel, K. Hashimoto, and A. Fujishima, J. Electroanal. Chem., 347, 409 (1993).
10. C. Reuben, E. Galun, H. Cohen, R. Tenne, R. Kalish, Y. Muraki, K. Hashimoto, A. Fujishima, J. M. Butler, and C. Levy-Clement, ibid., 396, 233 (1995).
11. J. Z. Zhu, S. Z. Yang, P. L. Zhu, X. K. Zhang, G. X. Zhang, X. F. Xu, and H. Z. Fan, Fresenius J. Anal. Chem., 352, 389 (1995).
12. F. Bouamrane, A. Tadjeddine, J. E. Butler, R. Tenne, and C. Levy-Clement, J. Electroanal. Chem., 405, 95 (1996).
13. H. B. Martin, A. Argoitia, U. Landau, A. B. Anderson, and J. C. Angus, This Journal, 143, L133 (1996).
14. N. Vinokur, B. Miller, Y. Avyigal, and R. Kalish, ibid., 143, L238 (1996).
15. Y. V. Pleskov, A. Y. Sakharova, M. D. Krotova, L. L. Bouilov, and B. V. Spitsyn, J. Electroanal. Chem., 228, 19 (1987).
16. K. Patel, K. Hashimoto, and A. Fujishima, J. Photochem. Photobiol. A, 65, 419 (1992).
17. K. Patel, K. Hashimoto, and A. Fujishima, Denki Kagaku, 60, 659 (1992).
18. Y. V. Pleskov, A. Y. Sakharova, E. V. Kasatkin, and V. A. Shepelin, J. Electroanal. Chem., 344, 401 (1993).
19. A. Y. Sakharova, Y. V. Pleskov, F. D. Quarto, S. Piazza, C. Sunseri, I. G. Teremetskaya, and V. P. Varnin, Russ. J. Electrochem., 31, 169 (1995).
20. A. Y. Sakharova, Y. V. Pleskov, F. D. Quarto, S. Piazza, C. Sunseri, I. G. Termetskaya, V. Y. Mishuk, and V. P. Varnin, This Journal, 142, 2704 (1995).
21. Y. V. Pleskov, A. Y. Sakharova, A. V. Churikov, V. P. Varnin, and I. G. Teremetskaya, Russ. J. Electrochem., 32, 1075 (1996).
22. A. M. Stoneham, in The Properties of Diamond, J. E. Field, Editor, pp. 189-190, Academic Press, London (1979).
23. D. S. Knight and W. B. White, J. Mater. Res., 4, 385 (1989).
24. R. DeClements, B. L. Hirsche, M. C. Granger, J. Xu, and G. M. Swain, This Journal, 143, L150 (1996).
25. P. Gonon, E. Gheeraert, A. Deneuville, F. Fontaine, L. Abello, and G. Lucazeau, J. Appl. Phys., 78, 7059 (1995).
26. G. Swain, Adv. Mater., 6, 388 (1994).
27. S. Alehashem, F. Chambers, J. W. Strojek, G. M. Swain, and R. Ramesham, Anal. Chem., 67, 2812 (1995).
28. P. Bou and L. Vandenbulcke, This Journal, 138, 2991 (1991).
29. B. G. Streetman, Solid State Electronic Devices, p. 175, Prentice-Hall International, Englewood Cliffs, NJ (1995).
30. S. M. Sze, The Physics of Semiconductor Devices, p. 287, John Wiley & Sons, New York (1981).
31. A. T. Collins and E. C. Lightowlers, in The Properties of Diamond, J. E. Field, Editor, pp. 79-105, Academic Press, London, (1979).
32. B. G. Streetman, Solid State Electronic Devices, p. 76, Prentice-Hall International, Englewood Cliffs, NJ (1995).
33. K. Okano, S. Koizumi, S. R. P. Silva, and G. A. J. Amaratunga, Nature, 381, 140 (1996).
34. B. G. Streetman, Solid State Electronic Devices, pp. 184-187, Prentice-Hall International, Englewood Cliffs, NJ (1995).
35. Y. Mori, H. Kawarada, and A. Hiraki, Appl. Phys. Lett., 58, 940 (1991).
36. S. A. Grot, G. Sh. Gildenblat, C. W. Hatfield, C. R. Wronski, A. R. Badzian, T. Badzian, and R. Messier, IEEE Electron Dev. Lett., EDL-11, 100 (1990).
37. B. R. Horrocks, M. V. Mirkin, and A. J. Bard, J. Phys. Chem., 98, 9106 (1994).
38. A. J. Nozik and R. Memming, ibid., 100, 13061 (1996).
39. G. V. Buxton, C. L. Greenstock, W. P. Helman, and A. B. Ross, J. Phys. Chem. Ref. Data, 17, 513 (1988).
40. D. F. Shriver, P. W. Atkins, and C. H. Langford, Inorganic Chemistry, 2nd ed., p. B7, Oxford University Press, Oxford (1994).