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Volumn 18, Issue 10, 2009, Pages 1211-1217
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Semiconductor properties and redox responses at a-C:N thin film electrochemical electrodes
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Author keywords
Electrochemical electrode; Nitrogen doped amorphous carbon; Redox responses; Semiconductor properties
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Indexed keywords
ELECTRODE POTENTIALS;
ELECTROLYTE SYSTEMS;
HELMHOLTZ;
INTRINSIC SEMICONDUCTORS;
LOWER DENSITY;
NITROGEN-DOPED;
NITROGEN-DOPED AMORPHOUS CARBON;
REDOX RESPONSE;
REDOX RESPONSES;
SEMICONDUCTOR PROPERTIES;
SPACE CHARGES;
SURFACE STATE;
AMORPHOUS CARBON;
CAPACITANCE;
ELECTROCHEMICAL PROPERTIES;
ELECTROLYSIS;
ELECTROLYTES;
NITROGEN;
REDOX REACTIONS;
ELECTROCHEMICAL ELECTRODES;
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EID: 68749099425
PISSN: 09259635
EISSN: None
Source Type: Journal
DOI: 10.1016/j.diamond.2009.04.003 Document Type: Article |
Times cited : (18)
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References (30)
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