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Volumn , Issue , 2010, Pages 90-96

A 3D model for simulating temperature and stress profiles during sub-millisecond laser spike annealing

Author keywords

[No Author keywords available]

Indexed keywords

2-D MODEL; 3D MODELS; BEAM PROFILES; EXPERIMENTAL MEASUREMENTS; FINITE ELEMENT SIMULATORS; LASER BEAM SIZE; LASER INTENSITIES; NARROW BEAMS; OPTICAL AND MECHANICAL PROPERTIES; PEAK TEMPERATURES; RATE DEPENDENT; SLIP SYSTEM; SPATIAL FLUCTUATION; SPATIAL VARIATIONS; SPIKE ANNEALING; STRESS FIELD; STRESS PROFILE; TEMPERATURE PROFILES; TEMPERATURE UNIFORMITY; TEMPERATURE-TIME PROFILES; THERMAL PROFILES; THERMALLY INDUCED STRESS;

EID: 78650466046     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RTP.2010.5623792     Document Type: Conference Paper
Times cited : (3)

References (14)
  • 7
    • 0037842469 scopus 로고
    • Addison-Wesley Pub. Co., Reading, Mass.
    • Eugene Hecht and Alfred Zajac. Optics. Addison-Wesley Pub. Co., Reading, Mass., 1974.
    • (1974) Optics
    • Hecht, E.1    Zajac, A.2
  • 8
    • 0026899612 scopus 로고
    • Unified mobility model for device simulation. I. Model equations and concentration dependence
    • D. Klaassen. A unified mobility model for device simulation-i. model equations and concentration dependence. Solid-State Electronics, 35(7):953-959, 1992. (Pubitemid 23567459)
    • (1992) Solid-State Electronics , vol.35 , Issue.7 , pp. 953-959
    • Klaassen, D.B.M.1
  • 9
    • 0026899752 scopus 로고
    • Unified mobility model for device simulation. II. Temperature dependence of carrier mobility and lifetime
    • D. Klaassen. A unified mobility model for device simulation-ii. temperature dependence of carrier mobility and lifetime. Solid-State Electronics, 35(7):961-967, 1992. (Pubitemid 23567458)
    • (1992) Solid-State Electronics , vol.35 , Issue.7 , pp. 961-967
    • Klaassen, D.B.M.1
  • 14
    • 0003760432 scopus 로고    scopus 로고
    • INSPEC, The Institution of Electrical Engineers, London
    • Robert Hull. Properties of crystalline silicon. INSPEC, The Institution of Electrical Engineers, London, 1999.
    • (1999) Properties of Crystalline Silicon
    • Hull, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.