Growth of heteroepitaxial AgInSe2 layers on Si (100) substrates by hot wall method

Optoelectronics and Advanced Materials, Rapid Communications

Volumn 4, Issue 5, 2010, Pages 657-661

  Pathak, D ^a   Bedi, R K ^a   Kaur, D ^b  

^a GURU NANAK DEV UNIVERSITY   (India)

^b INDIAN INSTITUTE OF TECHNOLOGY ROORKEE   (India)

Author keywords

Atomic force microscopy; Optical properties of thin films; Semiconductors; X ray diffraction

Indexed keywords

ATOMIC FORCE MICROSCOPY; COPPER COMPOUNDS; CRYSTALLITE SIZE; ENERGY GAP; EPITAXIAL GROWTH; FILM PREPARATION; INDIUM COMPOUNDS; OPTICAL PROPERTIES; SELENIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON; SILVER COMPOUNDS; SUBSTRATES; TEMPERATURE; THIN FILMS; X RAY DIFFRACTION;

CRYSTAL-FIELD SPLITTING; FUNDAMENTAL ABSORPTION EDGE; LOW TEMPERATURES; OPTICAL PROPERTIES OF THIN FILMS; REFLECTANCE DATA; SI (100) SUBSTRATE; STRUCTURAL AND OPTICAL PROPERTIES; THERMODYNAMIC EQUILIBRIA;

OPTICAL FILMS;

EID: 78650386151     PISSN: 18426573     EISSN: 20653824     Source Type: Journal    
DOI: None     Document Type: Article

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