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Applied Physics A: Materials Science and Processing

Volumn 95, Issue 3, 2009, Pages 843-847

Growth of AgInSe2 on Si(100) substrate by thermal evaporation technique

(3) Pathak, Dinesh a Bedi, R K a Kaur, Davinder b

a GURU NANAK DEV UNIVERSITY (India)

b INDIAN INSTITUTE OF TECHNOLOGY ROORKEE (India)

Author keywords

[No Author keywords available]

Indexed keywords

A THERMALS; CHALCOPYRITE STRUCTURES; CRYSTAL-FIELD SPLITTING; ENERGY-DISPERSIVE ANALYSIS; FIELD EMISSION-SCANNING ELECTRON MICROSCOPIES; FILM COMPOSITIONS; FUNDAMENTAL ABSORPTION EDGES; OPTICAL ENERGY-GAPS; PACKED GRAINS; PREFERRED ORIENTATIONS; SI (100) SUBSTRATES; SPHERICAL SYMMETRIES; STRUCTURAL AND OPTICAL PROPERTIES; THERMAL EVAPORATION TECHNIQUES; X-RAY DIFFRACTION PATTERNS;

COPPER COMPOUNDS; CRYSTALLITE SIZE; DIFFRACTION; FIELD EMISSION; HOLOGRAPHIC INTERFEROMETRY; OPTICAL PROPERTIES; ORGANIC POLYMERS; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; THERMAL EVAPORATION; VAPORS;

OPTICAL FILMS;

EID: 63949085048 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-009-5083-8 Document Type: Article

Times cited : (25)

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