Carrier lifetime in erbium-doped GaN waveguide emitting in 1540 nm wavelength

Applied Physics Letters

Volumn 97, Issue 24, 2010, Pages

  Wang, Q ^a   Hui, R ^a   Dahal, R ^b   Lin, J Y ^b   Jiang, H X ^b  

^a University of Kansas   (United States)

^b Texas Tech University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY BAND; ENERGY LEVEL; ERBIUM DOPED; ERBIUM ION; METALORGANIC CHEMICAL VAPOR DEPOSITION; POPULATION INVERSIONS; ROOM TEMPERATURE; SEMICONDUCTOR LATTICES; SEMICONDUCTOR WAVEGUIDE;

ERBIUM; ERBIUM DOPED FIBER AMPLIFIERS; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT AMPLIFIERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PUMPING; OPTICAL WAVEGUIDES; ORGANIC CHEMICALS; SILICA; WAVEGUIDES;

CARRIER LIFETIME;

EID: 78650373698     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3527089     Document Type: Article

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