Electron mobility in scaled silicon metal-oxide-semiconductor field-effect transistors on off-axis substrates

Applied Physics Letters

Volumn 94, Issue 7, 2009, Pages

  Qin, Guoxuan ^a   Zhou, Han ^a   Ramayya, Edwin B ^a   Ma, Zhenqiang ^a   Knezevic, Irena ^a  

^a University of Wisconsin Madison   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; ION BEAMS; MICROELECTRONICS; MONOLITHIC INTEGRATED CIRCUITS; MONTE CARLO METHODS; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS; SUBSTRATES; SURFACE ROUGHNESS;

ELECTRONIC DEVICE PERFORMANCE; EXPERIMENTAL DATUM; FIELD EFFECTS; GATE LENGTHS; III-V OPTOELECTRONICS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; MOBILITY DEGRADATIONS; MONOLITHIC INTEGRATIONS; MONTE CARLO SIMULATIONS; MOSFETS; OFF-AXIS; SI(1 0 0 ); SILICON MICROELECTRONICS;

SILICON WAFERS;

EID: 60749115373     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3085961     Document Type: Article

References (17)

1. R. Fischer, H. Morkoc, D. A. Neumann, H. Zabel, C. Choi, N. Otsuka, M. Longerbone, and L. P. Erickson, J. Appl. Phys. 0021-8979 10.1063/1.337253 60, 1640 (1986).
2. H. Shichijo, R. J. Matyi, and A. H. Taddiken, IEEE Electron Device Lett. 0741-3106 10.1109/55.6940 9, 444 (1988).
3. Z. Mi, P. Bhattacharya, J. Yang, and K. P. Pipe, Electron. Lett. 0013-5194 10.1049/el:20051558 41, 742 (2005).
4. Z. Mi, J. Yang, P. Bhattacharya, and D. L. Huffaker, Electron. Lett. 0013-5194 10.1049/el:20063582 42, 121 (2006).
5. S. C. Sun and J. D. Plummer, IEEE Trans. Electron Devices 0018-9383 10.1109/T-ED.1980.20063 27, 1497 (1980).
6. H. S. Momose, T. Ohguro, S. I. Nakamura, Y. Toyoshima, H. Ishiuchi, and H. Iwai, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2002.802624 49, 1597 (2002).
7. S. Takagi, A. Toriumi, M. Iwase, and H. Tango, IEEE Trans. Electron Devices 0018-9383 10.1109/16.337450 41, 2363 (1994).
8. M. Aoki, K. Yano, T. Masuhara, and K. Shimohigashi, IEEE Trans. Electron Devices 0018-9383 10.1109/16.30955 36, 1429 (1989).
9. T. Sato, Y. Takeishi, H. Hara, and Y. Okamoto, Phys. Rev. B 4, 1950 (1971).
10. J. E. Chung, J. Chen, P. K. Ko, C. Hu, and M. Levi, IEEE Trans. Electron Devices 0018-9383 10.1109/16.75175 38, 627 (1991).
11. S. M. Goodnick, D. K. Ferry, C. W. Wilmsen, Z. Liliental, D. Fathy, and O. L. Krivanek, Phys. Rev. B 0163-1829 10.1103/PhysRevB.32.8171 32, 8171 (1985).
12. M. H. White and J. R. Cricchi, IEEE Trans. Electron Devices 0018-9383 10.1109/T-ED.1972.17591 19, 1280 (1972).
13. H. C. Yuan, Z. Ma, M. M. Roberts, D. E. Savage, and M. G. Lagally, J. Appl. Phys. 0021-8979 10.1063/1.2214301 100, 013708 (2006).
14. S. W. Luan and G. W. Neudeck, J. Appl. Phys. 0021-8979 10.1063/1.351809 72, 766 (1992).
15. T. Cole, A. A. Lakhani, and P. J. Stiles, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.38.722 38, 722 (1977).
16. I. Knezevic, D. Z. Vasileska, and D. K. Ferry, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2002.1003723 49, 1019 (2002).
17. J. J. Wu, Tribol. Int. 33, 47 (2000). 0301-679X