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Physica Status Solidi - Rapid Research Letters

Volumn 4, Issue 12, 2010, Pages 359-361

Fully room-temperature-fabricated TiN/TaOx/Pt nonvolatile memory devices

(4) Choi, Sun Young a,b Yang, Min Kyu a,c Kim, Sangsig b Lee, Jeon Kook a

a Korea Institute of Science and Technology (South Korea)

b Korea University (South Korea)

c Yonsei University (South Korea)

Author keywords

Non volatile memory; Resistive switching; TaOx; TiN; Transition metal oxides

Indexed keywords

COMPLIANCE CURRENT; CONDUCTIVE FILAMENTS; DATA LOSS; ELECTRICAL PROPERTY; FABRICATION PROCESS; HIGH-TO-LOW; LOW-RESISTANCE STATE; MEMORY DEVICE; MULTILEVEL MEMORY; MULTILEVEL STORAGE; NON-VOLATILE; NON-VOLATILE MEMORIES; NON-VOLATILE MEMORY APPLICATION; NONDESTRUCTIVE READOUT; NONVOLATILE MEMORY DEVICES; OPERATION VOLTAGE; OXYGEN RESERVOIR; RESISTIVE SWITCHING; RETENTION TIME; ROOM TEMPERATURE; ROOM-TEMPERATURE PROCESS; TAOX; TIN ELECTRODES; TRANSITION METAL OXIDES;

ELECTRIC PROPERTIES; FABRICATION; NONVOLATILE STORAGE; OXYGEN; PLATINUM; SWITCHING; SWITCHING SYSTEMS; TITANIUM NITRIDE; TRANSITION METAL COMPOUNDS; TRANSITION METALS;

TIN OXIDES;

EID: 78650159107 PISSN: 18626254 EISSN: 18626270 Source Type: Journal
DOI: 10.1002/pssr.201004388 Document Type: Letter

Times cited : (4)

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