Ice lithography for nanodevices

Nano Letters

Volumn 10, Issue 12, 2010, Pages 5056-5059

  Han, Anpan ^a   Vlassarev, Dimitar ^a   Wang, Jenny ^a   Golovchenko, Jene A ^a   Branton, Daniel ^b  

^a HARVARD UNIVERSITY   (United States)

^b HARVARD UNIVERSITY   (United States)

Author keywords

Carbon nanotube; e beam lithography; field effect transistor; nanodevice

Indexed keywords

BEAM IMAGING; BEAM INTENSITY; CARBON NANOTUBE FIELD EFFECT TRANSISTORS; CONDUCTANCE PROPERTIES; DEVICE DEGRADATION; DEVICE FABRICATIONS; E-BEAM LITHOGRAPHY; FIELD EFFECTS; HIGH QUALITY; ICE FILMS; ICE LITHOGRAPHY; NANO DEVICE; NANO-DEVICES; NANOSCALE DEVICE; NEW APPROACHES; POLYMER RESIST; SCANNING ELECTRON MICROSCOPES; SEM; VAPOR-DEPOSITED FILMS; WATER ICE;

CARBON NANOTUBES; ELECTRON BEAM LITHOGRAPHY; ELECTRON MULTIPLIERS; ICE; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; WATER VAPOR;

FIELD EFFECT TRANSISTORS;

CARBON NANOTUBE; ICE; NANOMATERIAL;

ARTICLE; SCANNING ELECTRON MICROSCOPY;

ICE; MICROSCOPY, ELECTRON, SCANNING; NANOSTRUCTURES; NANOTUBES, CARBON;

EID: 78650123334     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl1032815     Document Type: Article

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