Scanning tunneling spectroscopy of lead sulfide quantum wells fabricated by atomic layer deposition

Nanotechnology

Volumn 21, Issue 48, 2010, Pages

  Lee, Wonyoung ^a   Dasgupta, Neil P ^a   Jung, Hee Joon ^b   Lee, Jung Rok ^a   Sinclair, Robert ^b   Prinz, Fritz B ^a,b  

^a STANFORD UNIVERSITY   (United States)

^b Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM OXIDES; BAND GAPS; BARRIER HEIGHTS; BARRIER MATERIAL; EFFECTIVE-MASS THEORY; LEAD SULFIDE; POTENTIAL BARRIER HEIGHT; QUANTUM CONFINEMENT EFFECTS; QUANTUM WELL; QUANTUM WELL STRUCTURES; SCANNING TUNNELING SPECTROSCOPY;

ATOMIC LAYER DEPOSITION; ATOMIC SPECTROSCOPY; ENERGY GAP; QUANTUM CONFINEMENT; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; THIN FILMS; VAPOR DEPOSITION; ZINC OXIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 78650090911     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/48/485402     Document Type: Article

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