15 μm Power pHEMT manufacturing technology for Ka- and Q- Band MMIC power amplifiers

2005 International Conference on Compound Semiconductor Manufacturing Technology

Volumn , Issue , 2005, Pages

  Nayak, Sabyasachi ^a   Kao, Ming Yih ^a   Bross, Aimee ^a   Chen, Shuoqi ^a   Wang, Qinghui ^a   Hillyard, Sean ^a   Ketterson, Andrew ^a   Decker, Kenneth ^a   Delaney, Joseph ^a   Salzman, Keith ^a  

^a TRIQUINT SEMICONDUCTOR   (United States)

Author keywords

GaAS; KA BAND; MILLIMETER WAVE; MMIC; PHEMT; POWER AMPLIFIER; Q BAND

Indexed keywords

DEVICE CHARACTERISTICS; GAAS; KA BAND; MANUFACTURING TECHNOLOGIES; MMIC POWER AMPLIFIER; PHEMT; Q-BAND; TRIQUINT SEMICONDUCTORS;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; POWER AMPLIFIERS; SEMICONDUCTOR DEVICE MANUFACTURE; STRUCTURAL OPTIMIZATION;

TECHNOLOGY;

EID: 46149083600     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. G.E. Brehm et al., "Commercial Application of GaAs Millimeter Wave MMICs, " 2004 Compound Semiconductor Manufacturing Technology Conference, pp.-28-31.
2. S.J. Nash et al., "A 1.4W Q-Band GaAs PHEMT MMIC, " 1997 GaAs IC Symposium, pp. 283-286.
3. T.H. Chen et al., "One Watt Q-Band Class A Pseudomorphic HMET MMIC Amplifiers, " 1994 IEEE MTT-S Int.Microwave Symposium. Dig., pp. 805-808.
4. C.F. Campbell and S.A. Brown, "A Compact 40 GHz 0.5-Watt Power Amplifier MMIC, " 1999 IEEE GaAs IC Symp. Dig., pp.141-143.
5. K. Kong et al., "A Compact 30GHz MMIC High Power Amplifier (3W CW) in Chip and Package Form, " 2002 IEEE GaAs IC Symposium Dig., pp. 37 - 39, 2002.
6. C.F. Campbell and S.A. Brown, "An Analytic Method to Determine GaAs FET Parasitic Inductances and Drain Resistance under Active Bias Condition, "2001 IEEE Transaction of Microwave Theory and Techniques, pp-1241- 1247.
7. S. Chen et al., " A Ka/Q Band 2Watt MMIC Power Amplifier Using Dual Recess 0.15 mm PHEMT Process, " 2004 IEEE MTT-S Digest, pp. 1669-1672.
8. IEEE CSIC Symposium, pp. 133-136.