High efficiency rear emitter pert cells on CZ and FZ n-type silicon substrates

Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

Volumn 1, Issue , 2006, Pages 996-999

  Zhao, Jianhua ^a   Wang, Aihua ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LIFETIME; CONVERSION EFFICIENCY; GRAIN BOUNDARIES; OPEN CIRCUIT VOLTAGE; PASSIVATION; SUBSTRATES;

CELL STRUCTURE; ENERGY CONVERSION EFFICIENCIES; SILICON SUBSTRATES;

SILICON SOLAR CELLS;

EID: 41749092034     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/WCPEC.2006.279286     Document Type: Conference Paper

References (5)

1. W.P. Mulligan, et al, "Manufacture of solar cells with 21% efficiency", 19th European PVSEC, Paris, 2004, pp. 387.
2. M. Tanaka, S. Okamoto, S. Tsuge and S. Kiyama, 3rd World Conf. on Photovoltaic Conversion, Osaka, 2003.
3. J. Knobloch, S.W. Glunz, D. Biro, W. Warta, E. Schaffer and W. Wettling, "Solar Cells with Efficiencies above 21% Processed from Czochralski Grown Silicon", 25th IEEE PVSC, 1996, pp. 405-408.
4. J. Schmidt, A.G. Aberle and R. Hezel, "Investigation of Carrier Lifetime Instabilities in CZ-Grown silicon", 26th IEEE PVSC, 1997, pp. 13-18.
5. J. Zhao, A. Wang and M.A. Green, "24.5% Efficiency Silicon PERT Cells on MCZ Substrates and 24.7% Efficiency PERL Cells on FZ Substrates", Progress in Photovoltaics, 7, 1999, pp. 471-474.