Oxide-GaAs interfacial electronic properties characterized by modulation spectroscopy of photoreflectance

Journal of Applied Physics

Volumn 83, Issue 5, 1998, Pages 2857-2859

  Hwang, J S ^a   Wang, Y C ^a,c   Chou, W Y ^a   Tyan, S L ^a   Hong, M ^b   Mannaerts, J P ^b   Kwo, J ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b LUCENT TECHNOLOGIES   (United States)

^c DEPARTMENT OF PHYSICS   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002958773     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367047     Document Type: Article

References (11)

1. A review can be found in W. F. Croydon and E. H. Parker, Dielectric Films on Gallium Arsenide (Gordon and Breach, New York, 1981).
2. A review can be found in C. W. Wilmsen, Physics and Chemistry of III-V Compound Semiconductor Interfaces (Plenum, New York, 1985).
3. A. Callegari, P. D. Hoh, D. A. Buchanan, and D. Lacey, Appl. Phys. Lett. 54, 332 (1989).
4. M. Hong, M. Passlack, J. P. Mannaerts, J. Kwo, S. N. G. Chu, N. Moriya, S. Y. Hou, and V. J. Fratello, J. Vac. Sci. Technol. 14, 2297 (1996).
5. M. Passlack, M. Hong, J. P. Mannaerts, R. L. Opila, S. N. G. Chu, N. Moriya, F. Ren, and J. Kwo, IEEE Trans. Electron Devices 44, 214 (1997).
6. F. Ren, M. Hong, W. S. Hobson, J. M. Kuo, J. R. Lothian, J. P. Mannaerts, J. Kwo, Y. K. Chen, and A. Y. Cho, Tech. Dig. Int. Electron Devices Meet., p. 943 (1996).
7. H. Shen, P. Parayanthal, Y. F. Liu, and Fred H. Pollak, Rev. Sci. Instrum. 58, 1429 (1987).
8. J. S. Hwang, S. L. Tyan, W. Y. Chou, M. L. Lee, D. Weyburne, Z. Hang, H. H. Lin, and T. L. Lee, Appl. Phys. Lett. 64, 3314 (1994).
9. H. Shen, X. C. Shen, F. H. Pollak, and R. N. Sacks, Phys. Rev. B 7, 4605 (1983).
10. H. Shen, P. Parayanthal, F. H. Pollak, M. Tomkiewicz, T. J. Drammond, and J. N. Schulman, Appl. Phys. Lett. 48, 653 (1986).
11. J. S. Hwang and S. L. Tyan, J. Vac. Sci. Technol. A 10, 3176 (1992).