Designing bulk-driven MOSFETs for ultra-low-voltage analogue applications

Semiconductor Science and Technology

Volumn 25, Issue 11, 2010, Pages

  Urban, Christopher ^a   Moon, James E ^a   Mukund, P R ^a  

^a Rochester Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANALOGUE CIRCUITRY; BULK CMOS; BULK-DRIVEN; CHANNEL LENGTH; DC VOLTAGE; DELTA-DOPED; DESIGN RULES; DOPED DEVICES; GATE OXIDE; GATE TRANSCONDUCTANCE; INPUT TERMINALS; MOS-FET; MOSFETS; OXIDE SCALING; OXIDE THICKNESS; SUPPLY VOLTAGES; ULTRA-LOW-VOLTAGE;

CMOS INTEGRATED CIRCUITS; DIFFERENTIAL AMPLIFIERS; LOGIC DESIGN; TRANSCONDUCTANCE;

MOSFET DEVICES;

EID: 78649923820     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/11/115011     Document Type: Article

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