Tight-binding model for the electronic structures of SiC and BN nanoribbons

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 43, Issue 1, 2010, Pages 440-445

  Zhao, Kun ^a   Zhao, Mingwen ^a   Wang, Zhenhai ^a   Fan, Yingcai ^a  

^a SHANDONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND DISPERSIONS; BAND GAP OSCILLATION; BAND GAPS; CHARGE REDISTRIBUTION; EDGE EFFECT; HOPPING INTEGRALS; NANORIBBONS; ON-SITE ENERGY; TIGHT BINDING MODEL;

BINDING ENERGY; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP;

SILICON CARBIDE;

EID: 78649914893     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2010.08.025     Document Type: Article

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