Self-consistent Monte Carlo device simulations under nano-scale device structures: Role of Coulomb interaction, degeneracy, and boundary condition

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Nakanishi, Kohei ^a   Uechi, Tadayoshi ^a   Sano, Nobuyuki ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

3D MONTE CARLO; DEVICE PROPERTIES; DEVICE SIMULATORS; ELECTRON DISTRIBUTION FUNCTION; MONTE CARLO DEVICE SIMULATIONS; NANOSCALE DEVICE; TRANSPORT CHARACTERISTICS;

BOUNDARY CONDITIONS; COULOMB INTERACTIONS; DISTRIBUTION FUNCTIONS; ELECTRON DEVICES; MONTE CARLO METHODS;

ELECTRONS;

EID: 77952342287     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424417     Document Type: Conference Paper

References (8)

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