Amorphization of nanocrystalline 3C-SiC irradiated with Si+ ions

Journal of Materials Research

Volumn 25, Issue 12, 2010, Pages 2341-2348

  Jiang, W ^a   Wang, H ^b   Kim, I ^a   Zhang, Y ^c   Weber, W J ^d  

^a PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

^b TEXAS A AND M UNIVERSITY   (United States)

^c University of Tennessee   (United States)

^d OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EX SITU; GRAIN SIZE; IN-SITU; ION CHANNELING; IRRADIATION CONDITIONS; NANOCRYSTALLINES; ROOM TEMPERATURE; SIC GRAINS;

IONS; IRRADIATION; SILICON CARBIDE; X RAY DIFFRACTION;

AMORPHIZATION;

EID: 78649510104     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2010.0311     Document Type: Article

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