Indications of bulk property changes from surface ion implantation

Philosophical Magazine

Volumn 91, Issue 2, 2011, Pages 250-262

  Wang, Y ^a   Yang, B ^b   Can, N ^c   Townsend, P D ^d  

^a CHINA UNIVERSITY OF GEOSCIENCES   (China)

^b BEIJING NORMAL UNIVERSITY   (China)

^c CELAL BAYAR UNIVERSITY   (Turkey)

^d UNIVERSITY OF SUSSEX   (United Kingdom)

Author keywords

nanoparticles; phase transitions; thermoluminescence; ZnO : Cu; ZnO : Tb

Indexed keywords

CHEMICAL MODIFICATION; II-VI SEMICONDUCTORS; IONS; NANOPARTICLES; PHASE TRANSITIONS; TEMPERATURE; THERMOLUMINESCENCE; ZINC OXIDE;

HIGH-DOSE ION IMPLANTATION; LATTICE STRUCTURES; LOW TEMPERATURES; POSSIBLE MECHANISMS; STRUCTURAL CHARACTERISTICS; SURFACE IMPLANT; THERMOLUMINESCENCE PROPERTIES; X RAY IRRADIATION;

ION IMPLANTATION;

EID: 78649428695     PISSN: 14786435     EISSN: 14786443     Source Type: Journal    
DOI: 10.1080/14786435.2010.518986     Document Type: Article

References (38)

1. P. Y. Yu and M. Cardona, Fundamentals of semiconductors, Springer, Berlin, 2010, p. 775.
2. D. Stievenard and J. C. Bourgoin (eds.), Ion Implantation in Semiconductors, Trans-Tech Publications, Zurich, 1991, p. 480.
3. P. D. Townsend, P. J. Chandler and L. Zhang, Optical Effects of Ion Implantation, Cambridge University Press, Cambridge, 2006, p. 280.
4. G. Dearnaley, Nature 256(1975) p. 701;
5. G. Dearnaley, Thin Solid Films 107(1983) p. 315.
6. S. T. Picraux, Annu. Rev. Mater. Sci. 14(1984) p. 335.
7. R. Hellborg, H. J. Whitlow and Y. Zhang (eds.), Ion Beams in Nanoscience and Technology, Springer, Berlin, 2009, p. 457.
8. W. Hayes and A. M. Stoneham, Defects and Defect Processes in Non-Metallic Solids, Wiley, New York, 1985, p. 472.
9. F. Agullo-Lopez, C. R. A. Catlow and P. D. Townsend, Point Defects in Materials, Academic Press, London, 1988, p. 445.
10. A. Kelly, G. W. Groves and P. Kidd, Crystallography and Crystal Defects, Wiley, Chichester, 2000, p. 470.
11. S. C. Abrahams (ed.), Properties of Lithium Niobate, INSPEC, London, 1989, p. 359.
12. B. Yang, P. D. Townsend and R. Fromknecht, J. Phys. Condens. Matter 16(2004) p. 8377.
13. B. Yang, P. D. Townsend and R. Fromknecht, Nucl. Instrum. Methods B 217(2004) p. 60.
14. B. Yang, P. D. Townsend and R. Fromknecht, Nucl. Instrum. Methods B 226(2004) p. 549.
15. B. J. Luff and P. D. Townsend, Meas. Sci. Tech. 4(1993) p. 65.
16. A. Ashrafi and C. Jagadish, J. Appl. Phys. 102(2007) p. 071101.
17. S. O. Kucheyev, J. E. Bradby, J. S. Williams and C. Jagadish, Appl. Phys. Lett. 80(2002) p. 956.
18. S. K. Kim, S. Y. Jeong and C. R. Cho, Appl. Phys. Lett. 82(2003) p. 562.
19. Y. Chen, Y. Runzhou, S. Qian, J. Qin and F. Zheng, Materials 61(2007) p. 4438.
20. Z. L. Wang, J. Phys. Condens. Matter 16(2004) p. R829.
21. P. D. Townsend, J. Phys. Condens. Matter 13(2001) p. 2211.
22. P. D. Townsend, B. Yang and Y. Wang, Contemp. Phys. 49(2008) p. 255.
23. P. D. Townsend, B. Yang and Y. Wang, Rev. Mex. Fis. S54 (2008) p. 29.
24. W. E. Carlos, E. R. Glaser and D. C. Look, Physica B 308/310 (2001) p. 976.
25. A. F. Kohan, G. Ceder, D. Morgan and C. G. Vande Walle, Phys. Rev. B 61(2000) p. 15019.
26. D. C. Look, C. Coskun, B. Claflin and G. C. Farlow, Physica B 340/342 (2003) p. 32.
27. F. Sun, C. X. Shan, S. P. Wang, B. H. Li, J. Y. Zhang, Z. Z. Zhang, D. X. Zhao, B. Yao, D. Z. Shen and X. W. Fan, Appl. Surf. Sci. 256(2010) p. 3390.
28. L. S. Vlasenko and G. D. Watkins, Phys. Rev. B 71(2005) p. 125210.
29. K. Vanheusden, L. Warren, C. H. Seager, R. Tallant, J. A. Voigt and B. E. Gnade, J. Appl. Phys. 79(1996) p. 7983.
30. N. Y. Garces, L. Wang, L. Bai, N. C. Giles, L. Halliburton and G. Cantwell, Appl. Phys. Lett. 81(2002) p. 622.
31. P. S. Xu, Y. M. Sun, C. S. Shi, F. Q. Xu and H. B. Pan, Nucl. Instrum. Methods B 199(2003) p. 286.
32. A. Janotti and C. G. Vande Walle, Appl. Phys. Lett. 87(2005) p. 122102.
33. Y. W. Heo, D. P. Norton and S. J. Pearton, J. Appl. Phys. 98(2005) p. 073502.
34. U. Ozgur, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reschikov, S. Dogan, V. Avrutin, S. J. Cho and H. Morkoc, J. Appl. Phys. 98(2005) p. 041301.
35. F. Tuomisto, K. Saarinen, D. C. Look and G. C. Farlow, Phys. Rev. B 72(2005) p. 085206.
36. T. M. Borseth, B. G. Svensson, A. Yu Kuznetsov, P. Klason, Q. X. Zhao and M. Willander, Appl. Phys. Lett. 89(2006) p. 262112.
37. A. B. Djurisic and Y. H. Leung, Small 2(2006) p. 944.
38. Y.-J. Lin, C.-L. Tsai, Y.-M. Lu and C.-J. Liu, J. Appl. Phys. 99(2006) p. 093501.